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Transistors are essential components of modern electronic devices, playing a crucial role in amplifying or switching electrical signals. With advancements in technology, various ty. D965 Datasheet (HTML) - Jiangsu Changjiang Electronics Technology Co., Ltd D965 Product details TRANSISTOR（ NPN ） FEATURES Power dissipation PCM : 0.75 W（ Tamb=25℃） Collector current ICM : 5 A Collector-base voltage V (BR)CBO : 42 V Operating and storage junction temperature range TJ， Tstg: -55℃ to +150. Part Type: NPN Transistor Collector Maximum Dissipated Power (P CM): 0.75 W Collector maximum allowable current (I CM): 5 A Collector-base voltage (V CBO): 42 V. 2SD965BIPOLAR TRANSISTOR (NPN)FEATURES Large Collector Power Dissipation and Current Low Collector-Emitter Saturation Voltage Surface Mount deviceSOT-89MECHANICAL DATA Case: SOT-89 Case Material: Molded Plastic. D965-T Datasheet and Replacement Type Designator: D965-T Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0.75 W Maximum Collector-Base Voltage Vcb: 42 V Maximum Collector-Emitter Voltage Vce: 22 V Maximum Emitter-Base Voltage Veb: 6 V Maximum Collector Current Ic max: 5 A Max. Operating Junction Temperature (Tj): 150 °C Forward Current Transfer Ratio. D965-R Micro Commercial Components (MCC) Bipolar Transistors - BJT datasheet, inventory pricing.
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The D965 is an NPN bipolar junction transistor that is widely used in low-frequency power amplification and as a stroboscope in various electronic circuits. This transistor is recognized for its ability to handle a collector current of 5A, making it suitable for medium power applications.
The D965 is an NPN bipolar junction transistor that is widely used in low-frequency power amplification and as a stroboscope in various electronic circuits. This transistor is recognized for its ability to handle a collector current of 5A, making it suitable for medium power applications.
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Pesan hari ini dan akan tiba pada: Nov 27-Dec 04
D965 datasheet, D965 equivalent, D965 cross referenceNPN TRANSISTOR 5.0A D965 AF OUTPUT AMPLIFIER FOR DC-DC CONVERTER FOR CAMERA ELECTRONIC FALSH UNIT HIGH PERFORMANCE AT LOW SUPPL.
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D965-T NPN Plastic-Encapsulate Transistors Features • Power Dissipation: PCM=0.75W @ Tamb=25 • Collector Current: ICM=5A Maximum Ratings.
UNISONIC TECHNOLOGIES CO., LTD D965SS / D965ASS NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * D965SS : Collector-Emitter voltage up to 20 V * D965ASS : Collector-Emitter voltage up to 30 V APPLICATIONS * Audio amplifier * Flash unit of camera * Switching circuit ORDERING.
D965-T Datasheet and Replacement Type Designator: D965-T Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0.75 W Maximum Collector-Base Voltage Vcb: 42 V Maximum Collector-Emitter Voltage Vce: 22 V Maximum Emitter-Base Voltage Veb: 6 V Maximum Collector Current Ic max: 5 A Max. Operating Junction Temperature (Tj): 150 °C Forward Current Transfer Ratio.
D965 NPN General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES TO-92 Audio amplifier G HEmitter Flash unit of camera Collector Switching circuit Base JA DCLASSIFICATION OF hFE (2) Max.A 4.40 4.70Rank R T VB 4.30 4.70KC 12.70 -R 2.
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Disclaimer: Artikel ini dibuat untuk tujuan informasi dan hiburan semata. Flash memory cards consist of large numbers of individual cells, each of which contains a set of transistors. Under normal circumstances, current flows between the transistors and.
